Production of the first memory with eUFS 3.1 standard by Samsung


Production of the first memory with eUFS 3.1 standard by Samsung

Production of the first memory with eUFS 3.1 standard by Samsung

News unit EMGblog.com: Samsung Electronics Company – one of the pioneers of the memory industry And it’s considered storage – it’s usually earlier than other brands in offering chips based on newer technologies. Samsung was among the first brands to use storage chips based on UFS standards. 2.1 produced UFS 2.0 and UFS 3.0. UFS 3.0 standard to many high-end smartphones, including the Galaxy S20, OnePlus devices in 2019 as well as the series Xiaomi Mi 10 has arrived. Now, on Tuesday, March 17, 2020 (March 27, 2018), Samsung began mass production of the first 512 GB eUFS 3.1 memory for use in flagships announced.

According to Cheol Choi, executive vice president of memory sales and marketing at Samsung, with the introduction of the fastest mobile memory by Samsung, smartphone users no longer need to worry about bottlenecks and delays when using Older memory cards used to suffer from it, don’t worry. According to Samsung’s claim, the eUFS 3.1 memory has broken the 1GB/s speed in smartphone memory and has tripled the write speed compared to the previous generation 512GB eUFS 3.0 memory.

Samsung sequential writing speed in eUFS 3.1 claims over 1,200MB/s, which is more than twice the speed of SATA-based PC memory (ie 540MB/s) and more than 10 times the speed of UHS-I microSD cards (ie 90MB/s seconds) will be That said, users can experience the speed of an ultra-slim notebook when storing heavy files, such as 8K videos or several hundred bulky photos, on their phones, without any buffering. Similarly, it will take less time to transfer content from an old phone to a newer phone. According to what Samsung announced in introducing the new eUFS 3.1, it takes only 1.5 minutes to transfer 100 GB of data in smartphones equipped with this type of memory. Meanwhile, it will take more than 4 minutes to transfer the same amount of data in phones with UFS 3.0 memory.

Reading and writing speed in various Samsung mobile internal memories

From the perspective of random performance, the processing speed in 512GB eUFS 3.1 memory is up to 60% It is faster than UFS 3.0 version. The ability of this new memory in random reading equals 100,000 input and output operations per second (IOPS) and in random writing 70,000 IOPS. It should be noted that, in addition to 512 GB, this new memory is also produced in 256 and 128 GB models. That smartphones like Galaxy Note 20 and the next folding phone Samsung ( With the possible name of Galaxy Fold 2) to be equipped with this type of memory, it is not far from expected.

This month, Samsung began mass production of the fifth generation of V-NAND memory in the X2 production line at one of its factories in Xi’an, China, to fully meet the demand for memory across the high-end smartphone market. be a flag bearer Currently, Samsung produces a significant amount of 5th generation V-NAND memory at the P1 production line located in Pyeongtaek, Korea, but plans to produce 6th generation V-NAND memory instead of 5th generation in order to meet the growing market demand. replace in line P1.

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