Introducing UltraRAM – RAM and storage integration technology


Introducing UltraRAM – RAM and storage integration technology

Introducing UltraRAM – RAM and storage integration technology

News unit EMGblog.com: Researchers from the Engineering and Physics Department of Lancaster University ) UK on January 5 of this year (15 January 1400), an article published in which they discussed the details related to the mass production of UltraRAM and the innovations made in this field. This group of researchers has been working on this new type of memory for several years, and it seems that now by achieving the perfect solution, it is possible to produce this product in high numbers. UltraRAM is a new memory technology that combines the nonvolatile feature of flash storage with the speed, energy efficiency and durability of memories such as DRAM.

In fact, UltraRAM can be a type of multipurpose memory ( universal memory) that can meet all memory needs (including RAM and storage space) in personal computers and other devices. Of course, we have witnessed similar ideas being proposed before and not implemented, among which we can mention resistive RAM, magnetoresistive RAM, and phase-change memory; Plans that ultimately did not achieve the desired effects in some initial reports and did not achieve success in practice. Additionally, Intel’s Optane memory technology, designed to fill the gap between DRAM and storage, doesn’t fully bridge the gap, and the American chipmaker pulled the Optane solution for desktop computers from its lineup last year.

UltraRAM’s design takes advantage of the unique properties of compound semiconductors commonly used in photonic devices such as LEDs, lasers, and infrared sensors. According to researchers, the latest silicon sample made from this technology has a much brighter performance compared to gallium arsenide semiconductor tablets.

Researchers including the strengths and advantages of using UltraRAM “The possibility of storing data for at least 1000 years”, the ability to switch fast and the erasing cycle of the program “from 100 to 1000 times more than flash memory” have been described. By adding such capabilities to the speed, energy efficiency and durability of DRAM, we are facing the possibility of producing a product that is considered a revolution in the field of storage.

Apparently, UltraRAM was developed to bridge the gap between RAM and storage and unify the two. Therefore, at least theoretically, this technology can be seen as a solution to different memory needs, in the form of a product. In a PC system, this means that by installing an UltraRAM, say 2 TB, the user’s RAM and hard drive memory needs will be covered simultaneously.

This is an important change that, if it works according to the current claim of the researchers, it can replace the process of “in-memory processing” or in-memory processing, which is developed by manufacturers such as Samsung supported, boost. Also, as mentioned, with UltraRAM, the storage space is unified with the device’s RAM in a silicon tablet. Therefore, if this idea is realized, the use of UltraRAM in servers, personal computers, smart devices, game consoles and other such things will not be far from expected. In addition, if the speed of this new memory technology is fast enough, it could possibly replace technologies such as GDDR (DDR memories designed specifically for the graphics processing unit) and HBM (high bandwidth memories).

Of course, the pricing of UltraRAM is another important issue related to its mass production. Because if the final price of this product is not competitive, the rate of acceptance and the possibility of transformation will decrease. Of course, it is still not possible to reach a final conclusion about the price of this technology, but the researchers have expressed satisfaction with the progress in mass production.

Lancaster University researchers have added at the end of this article that they will continue their efforts to improve quality, fine-tune the manufacturing and implementation process, and expand the use of UltraRAM.

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